https://repozytorium.ukw.edu.pl///handle/item/52 2026-09-16T06:21:56Z 2026-09-16T06:21:56Z Syrotych, Yurii Gorbenko, Vitaliy Pejchal, Jan Kucerkova, Romana Mares, Jiri Nikl, Martin Kamada, Kei Yoshikawa, Akira Fedorov, Alexander Sidleskiy, Oleg Winiecki, Janusz Zorenko, Yuriy https://repozytorium.ukw.edu.pl///handle/item/8277 2026-09-15T09:48:09Z 2026-01-01T00:00:00Z

Two- and Three-Layered Composite Scintillators Basedonthe Ce3+-Doped GAGG and TbAG Garnets for the Simultaneous Registration of Various Types of Ionizing Radiation Syrotych, Yurii; Gorbenko, Vitaliy; Pejchal, Jan; Kucerkova, Romana; Mares, Jiri; Nikl, Martin; Kamada, Kei; Yoshikawa, Akira; Fedorov, Alexander; Sidleskiy, Oleg; Winiecki, Janusz; Zorenko, Yuriy This work presents our most recent results in the development of composite scintillators using Liquid Phase Epitaxy growth method, based on the single crystalline films and single crystals of garnet compounds for radiation monitoring of different components of mixed ionization radiation fluxes. Such composite scintillators present two and three layered epitaxial structures consisting of two single crystalline films of Ce3+ doped garnets, namely Gd3Al5-xGaxO12:Ce garnet with Ga content x=1.75–2.25 as a first film layer and Tb3Al5O12:Ce garnet as a second film layer. As substrates, the Gd3Al5-xGaxO12:Ce single crystals with fixed Ga concentration x=2.3, 2.5 and 3.0 were used. For estimation of scintillation properties of the respective epitaxial structures (pulse height spectra, light yield and scintillation decay kinetics) we have used three types of ionizing radiation: α–particles (239Pu), β-particles (90Sr + 90Y) and γ–quanta (137Cs).

2026-01-01T00:00:00Z Markovskyiv, Anton Syrotych, Yurii Majewska, N. Kamiński, M. Gorbenko, Vitaliy Zorenko, Tetiana Wierzbicka, A. Suchocki, A. Mahlik, S. Zorenko, Yuriy https://repozytorium.ukw.edu.pl///handle/item/8274 2026-09-11T14:34:43Z 2025-01-01T00:00:00Z

A comparative analysis of structural and luminescence properties of homoepitaxially and quasi-homoepitaxially grown LuAG:Ce single crystalline films under ambient and high pressure Markovskyiv, Anton; Syrotych, Yurii; Majewska, N.; Kamiński, M.; Gorbenko, Vitaliy; Zorenko, Tetiana; Wierzbicka, A.; Suchocki, A.; Mahlik, S.; Zorenko, Yuriy This work is dedicated to investigating the structural, luminescence and photocurrent characteristics of LuAG:Ce single crystalline films grown using the liquid phase epitaxy method on both LuAG and YAG substrates. The primary objective is to analyze the influence of different growth modes, namely homoepitaxial and quasi-homoepitaxial, on the structural and luminescence properties of Ce3+ ions in these films under ambient and high-pressure conditions. Based on the results of X-ray diffraction measurements, we can conclude that both epitaxial structures are fully relaxed. However, a slight deformation of the garnet lattices is observed, manifesting the inequality of the in-plane and out-of-plane lattice constants of substrates and films. The difference in the energy gap values between positions of 4f–5d1,2 Ce3+ absorption bands (6–12 meV) and the positions of the Ce3+ emission band (6 meV) was observed for both LuAG:Ce films and caused by the small differences in local perturbations of garnet hosts for epitaxial structures, grown in homoepitaxial and quasi-homoepitaxial modes. The Ce3+ emission intensity in both LuAG:Ce films decreases with temperature in the 10–300 K range. The decay time of the Ce3+ luminescence in the LuAG:Ce homoepitaxially-grown film demonstrates a weak temperature dependence in the mentioned range. However, in the LuAG:Ce quasi-homoepitaxially-grown film, the decay time of the Ce3+ emission shows notable temperature dependences in the 10–300 K range, probably due to the formation of Ce4+–Pb2+ pair centers. The non-monotonical redshift of the Ce3+ emission band and the increase of the Ce3+ decay time are observed in both LuAG:Ce films under increasing external pressure from ambient to 19 GPa due to the compression and distortion of the crystal lattice. The redshift changes of the Ce3+ emission band on pressure are significantly more complicated for the LuAG:Ce quasi-homoepitaxially-grown film than the homoepitaxially-grown counterpart. The outcomes of this study contribute to the fundamental understanding of epitaxial growth processes and their impact on the luminescence characteristics of rare-earth-doped materials in the single crystalline film form.

2025-01-01T00:00:00Z Syrotych, Yurii Gorbenko, Vitaliy Witkiewicz-Łukaszek, Sandra Zorenko, Tetiana Kaczmarek, Mariusz Pejchal, Jan Mares, J. A. Kucerkova, Romana Nikl, M. Kamada, K. Yoshikawa, A. Zorenko, Yuriy https://repozytorium.ukw.edu.pl///handle/item/8273 2026-09-12T08:58:32Z 2024-01-01T00:00:00Z

Scintillation properties of multilayered composite scintillators based on the YAG:Ce and TbAG:Ce single crystalline films and GAGG:Ce crystal substrates Syrotych, Yurii; Gorbenko, Vitaliy; Witkiewicz-Łukaszek, Sandra; Zorenko, Tetiana; Kaczmarek, Mariusz; Pejchal, Jan; Mares, J. A.; Kucerkova, Romana; Nikl, M.; Kamada, K.; Yoshikawa, A.; Zorenko, Yuriy This work demonstrates current progress of our group in developing of two- and three-layered composite for radiation monitoring of various components of mixed ionization radiation fluxes based on the epitaxial structures of $Ce^{3+}$ doped garnet compounds using the Liquid Phase Epitaxy growth technique. These scintillators contain one or two single crystalline films, dedicated for registration of low-penetrating particles, and bulk single crystal substrates used for detection of high penetrating $\gamma$-rays. For creation of two- and three-layered epitaxial structures, the single crystalline films of $Ce^{3+}$ doped $Y_3Al_5O_{12}$, $Tb_3Al_5O_{12}$ and $Tb_2GdAl_5O_{12}$ garnets were used. The single crystal of mixed $Gd_3Ga_xAl_{5-x}O_{12}:Ce$ garnet with fixed Ga concentrations of $x = 2.3$ and $3.0$ are utilized as substrates. To assess the scintillation properties of these epitaxial structures, the pulse height spectra, light yield and scintillation decay kinetics were measured under excitation by $\alpha$-particles ($^{239}\text{Pu}$), $\beta$-particles ($^{90}\text{Sr} + ^{90}\text{Y}$) and $\gamma$-rays ($^{137}\text{Cs}$). Finally, the figure-of-merit of composite scintillators under study were calculated for selection of the best epitaxial structures for simultaneous registration $\alpha$- and $\beta$-particles and $\gamma$-rays.

2024-01-01T00:00:00Z Solovjovas, Arnoldas Nargelas, Saulius Soltanaite, Gabija Podlipskas, Zydrunas Zorenko, Yuriy Gorbenko, Vitaliy Auffray, Etiennette Tamulaitis, Gintautas https://repozytorium.ukw.edu.pl///handle/item/8272 2026-09-11T14:33:59Z 2025-01-01T00:00:00Z

Luminescence kinetics in Ce-doped TbxGd Al5O12 garnet with various terbium content Solovjovas, Arnoldas; Nargelas, Saulius; Soltanaite, Gabija; Podlipskas, Zydrunas; Zorenko, Yuriy; Gorbenko, Vitaliy; Auffray, Etiennette; Tamulaitis, Gintautas In view of the current demand of fast scintillators for ionizing radiation detectors for high energy physics experiments and medical imaging, the excitation transfer between host crystal and activator ions in activated scintillators is increasingly important phenomenon. The current study is focused on the excitation transfer in Ce-doped terbium gadolinium aluminum garnets with different ratios of Tb and Gd ions in the host lattice. Scanning electron microscopy and cathodoluminescence images show that the liquid phase epitaxy (LPE) using PbO-B2O3 flux ensure the fabrication of thin single crystalline films of such scintillators of high structural homogeneity. Time-resolved photo- and cathodo-luminescence spectroscopy of the films revealed that the electron transfer from activator ion Ce3+ to the nearest lattice-building ions Tb3+ is faster than that vice versa. The acceleration of the decay of Ce3+ luminescence by introduction of Tb is demonstrated, whereas the Tb3+ ions emit prompt photons in subnanosecond domain but this emission is strongly quenched by nonradiative recombination. We show that the excitation transfer from Ce3+ to the closest Tb3+ is the dominant mechanism accelerating the emission decay of TbxGd3-xAl5O12:Ce operating as a scintillator.

2025-01-01T00:00:00Z